Bulk vapour growth of CdTeGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 65-68, issn 0022-0248Conference Paper

Doping of wide gap II-VI compoundsFASCHINGER, W.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 80-86, issn 0022-0248Conference Paper

Island formation of InAs grown on GaAsNABETANI, Y; YAMAMOTO, N; TOKUDA, T et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 363-367, issn 0022-0248Conference Paper

Effect of temperature field on growth stabilityGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 69-74, issn 0022-0248Conference Paper

Mass flux of ZnSe by physical vapor transportYI-GAO SHA; CHING-HUA SU; PALOSZ, W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 42-48, issn 0022-0248Conference Paper

Ordering in GaInP grown at low temperaturesSU, L. C; HO, I. H; STRINGFELLOW, G. B et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 558-563, issn 0022-0248Conference Paper

Growth of CuInTe₂ polycrystalline thin filmsNADENAU, V; WALTER, T; SCHOCK, H. W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 251-255, issn 0022-0248Conference Paper

Liquid phase electroepitaxy of III-V semiconductorsGOLUBEV, L. V; EGOROV, A. V; NOVIKOV, S. V et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 277-282, issn 0022-0248Conference Paper

Pseudomorphic vanadyl-phthalocyanine and its stable orientation on KBrHASHIMOTO, S; OGAWA, T; ASAKA, N et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 649-654, issn 0022-0248Conference Paper

The optimal temperature profile in crystal growth from the vapourGRASZA, K; JANIK, E; MYCIELSKI, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 75-79, issn 0022-0248Conference Paper

Characterization of <111> cadmium telluride electrodeposited on cadmium sulphideKAMPMANN, A; COWACHE, P; MOKILI, B et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 256-261, issn 0022-0248Conference Paper

Characterization of vapor phase growth using X-ray techniquesKISKER, D. W; STEPHENSON, G. B; FUOSS, P. H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 104-111, issn 0022-0248Conference Paper

Defect control during growth of highly mismatched (100) InAs/GaAs-heterostructuresTRAMPERT, A; TOURNIE, E; PLOOG, K. H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 368-373, issn 0022-0248Conference Paper

Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor depositionSOGA, T; JIMBO, T; UMENO, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 554-557, issn 0022-0248Conference Paper

Molecular orientation of vapor-deposited films of long-chain molecules observed with atomic force microscopyTAKIGUCHI, H; IZAWA, M; YASE, K et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 645-648, issn 0022-0248Conference Paper

Studies of the compensation mechanism in CdTe grown from the vapour phaseFIEDERLE, M; EBLING, D; EICHE, C et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 142-147, issn 0022-0248Conference Paper

Uniformity in (Hg, Mn)Te films grown by metalorganic vapour phase epitaxyHALLAM, T. D; OKTIK, S; FUNAKI, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 604-609, issn 0022-0248Conference Paper

Characterization of cadmium telluride crystals grown by different techniques from the vapour phaseLAASCH, M; SCHWARZ, R; JOERGER, W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 125-129, issn 0022-0248Conference Paper

Elementary processes in molecular beam epitaxy studied by in-situ scanning electron microscopyINOUE, N.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 334-339, issn 0022-0248Conference Paper

Hard heteroepitaxy of molecular beam epitaxial grown PbTe on off oriented GaAs(100) substratesSADOWSKI, J; HERMAN, M. A.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 449-454, issn 0022-0248Conference Paper

In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxyKOUKITU, A; TAKAHASHI, N; MIURA, Y et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 239-245, issn 0022-0248Conference Paper

Optical methods for measuring iodine vapor during mercuric iodide crystals growth by physical vapor transportNASON, D; BIAO, Y; BURGER, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 23-28, issn 0022-0248Conference Paper

Stress birefringence and microinclusions in sublimation-grown bulk CdTeKLOESS, G; LAASCH, M; SCHWARZ, R et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 130-135, issn 0022-0248Conference Paper

Surface topography of epitaxial Au(111) films deposited on MoS₂NAGASHIMA, S; OTSUKA, I.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 266-270, issn 0022-0248Conference Paper

Thermal dissociation of ditertiarybutylselenide and methylallylselenide and its impact on the growth of ZnSe by metalorganic vapour phase epitaxyKUHN, W. S; HELBING, R; QU'HEN, B et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 580-586, issn 0022-0248Conference Paper